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Broadband Monolithic Silicon PIN Diode Switches
Rev 5.0
MA4SW110 MA4SW210 MA4SW310
MA4SW110 (SPST)
Features
* Broad Bandwidth * Specified up to 20 GHz * Usable to 26.5 GHz * Low Insertion Loss / High Isolation * Rugged, Fully Monolithic, Glass Encapsulated Construction
Description
The MA4SW110, 210 and 310 series are broad band monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as small signal, high performance switches in applications up to 26.5 Ghz. They provide performance levels superior to those realized by hybrid MIC designs incorporating beam lead and PIN chip diodes that require chip and wire assembly. These switches are fabricated using M/A-COM's patented HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon leads, while gold backside metalization allows for manual or automatic chip bonding via 80/20 AuSn solder or conductive epoxy
MA4SW210 (SPDT)
MA4SW310 (SP3T)
Absolute Maximum Ratings1
Parameter Operating Temperature Storage Temperature Applied Voltage (Reverse) RF Incident Power Bias Current Absolute Maximum -65 oC to +125oC -65 oC to +150oC 50 volts +30 dBm 50mA
1. Exceeding these limits may cause permanent damage.
Specification Subject to Change Without Notice
M/A-COM, Inc. _______________________________________________________________________________
North America: Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769
1
1Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
Monolithic Pin Diode Switches
MA4SW110 (SPST) Electrical Specifications @ TAMB = +25oC, +/- 20 mA Bias Current Parameter Frequency Minimum 6 GHz Insertion Loss 13 GHz 20 GHz 6 GHz 46 Isolation 13 GHz 39 20 GHz 34 6 GHz 22 Input Return Loss 13 GHz 15 20 GHz 14 Switching Speed1 Voltage Rating2 Signal Compression @ 500mW 1GHz MA4SW210 (SPDT) Electrical Specifications @ TAMB = +25oC, +/- 20 mA Bias Current Parameter Frequency Minimum 6 GHz Insertion Loss 13 GHz 20 GHz 6 GHz 48 Isolation 13 GHz 40 20 GHz 34 6 GHz 20 Input Return Loss 13 GHz 18 20 GHz 15 Switching Speed1 Voltage Rating2 Signal Compression @ 500mW 1 GHz MA4SW310 (SP3T) Electrical Specifications @ TAMB = +25oC, +/- 20 mA Bias Current Parameter Frequency Minimum 6 GHz Insertion Loss 13 GHz 20 GHz 6 GHz 49 Isolation 13 GHz 42 20 GHz 33 6 GHz 20 Input Return Loss 13 GHz 14 20 GHz 11 Switching Speed1 Voltage Rating2 Signal Compression @ 500mW 1 GHz -
MA4SW110, MA4SW210, MA4SW310
V5.00
Nominal 0.4 0.5 0.7 55 47 42 31 33 27 20 0.2
Maximum 0.7 0.9 1.2 50 -
Units dB dB dB dB dB dB dB dB dB ns V dB
Nominal 0.4 0.5 0.7 63 50 42 27 25 25 20 0.2
Maximum 0.7 1.0 1.2 50 -
Units dB dB dB dB dB dB dB dB dB ns V dB
Nominal 0.5 0.7 0.9 57 48 42 24 22 21 20 0.2
Maximum 0.8 1.1 1.5 50 -
Units dB dB dB dB dB dB dB dB dB ns V dB
1 Typical Switching Speed measured from 10 % to 90 % of detected RF signal driven by TTL compatible drivers. 2 The Reverse Current in the shunt or series PIN diode shall be 10A maximum at 50 volts reverse voltage.
Specification Subject to Change Without Notice
2
______________________________________________________________________________ M/A-COM, Inc.
Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
North America: Tel. (800) 366-2266 Fax (800) 618-8883
Monolithic Pin Diode Switches
MA4SW110, MA4SW210, MA4SW310
V5.00
Typical Performance Curves @ TAMB = +25C, +/- 20mA Bias Current
MA4SW110 RETURN LOSS vs FREQUENCY
-10
MA4SW210 RETURN LOSS vs FREQUENCY
-10 -15
RETURN LOSS (dB)
-15
RETURN LOSS (dB)
O utput Return Loss -20
O utput Return Loss -20
-25
-25
-30
Input Return Loss
-30
Input R eturn Loss
-35 0 5 10 15 FR EQUEN CY (GH z) 20 25 30
-35 0 5 10 15 FREQUEN CY (GH z) 20 25 30
MA4SW310 RETURN LOSS vs FREQUENCY
-10
MA4SW110 INSERTION LOSS vs FREQUENCY
-0.2 -0.3
INSERTION LOSS (dB)
RETURN LOSS (dB)
-15
O utput Return Loss
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1
-20
-25 Input Return Loss -30 0 5 10 15 FR EQU ENC Y (GH z) 20 25 30
0
5
10
15 FR EQU ENC Y (GH z)
20
25
30
MA4SW210 INSERTION LOSS vs FREQUENCY
-0.2 -0.3
INSERTION LOSS (dB)
MA4SW310 INSERTION LOSS vs FREQUENCY
-0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1 -1.1 -1.2
INSERTION LOSS (dB)
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1 0 5 10 15 FR EQU ENC Y (GH z) 20 25 30
0
5
10
15 FR EQU ENC Y (GH z)
20
25
30
S-Parameters:
Touchstone files containing S-Parameter data for these devices are available upon request.
Specification Subject to Change Without Notice
M/A-COM, Inc. _______________________________________________________________________________
North America: Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769
3
3Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
Monolithic Pin Diode Switches
MA4SW110, MA4SW210, MA4SW310
V5.00
Typical Performance Curves @ TAMB = +25C, +/- 20mA Bias Current
MA4SW110 ISOLATION vs FREQUENCY
-3 5 -4 0 -4 5 ISOLATION (dB) -5 0 -5 5 -6 0 -6 5 -7 0 -7 5 -8 0 0 5 10 15 F R E Q U E N C Y (G H z) 20 25 30
-3 5 -4 0 -4 5
MA4SW210 ISOLATION vs FREQUENCY
ISOLATION (dB)
-5 0 -5 5 -6 0 -6 5 -7 0 -7 5 -8 0 0 5 10 15 F R E Q U E N C Y (G H z) 20 25 30
MA4SW310 ISOLATION vs FREQUENCY
-3 5 -4 0 -4 5
-2 2
INPUT RETURN LOSS vs BIAS CURRENT @ 10 GHz
INPUT RETURN LOSS (dB)
-2 4
M A 4S W 3 1 0
ISOLATION (dB)
-5 0 -5 5 -6 0 -6 5 -7 0 -7 5 -8 0 0 5 10 15 F R E Q U E N C Y (G H z) 20 25 30
-2 6 -2 8 -3 0 -3 2
M A 4S W 110 M A 4S W 2 10
-3 4 0 5 10 15 20 25 30 35 40 45 50 55 C U R R E N T (m A )
INSERTION LOSS vs BIAS CURRENT @ 10 GHz
-0 .3 5 -0 .4
-2 1 .5
M A 4 S W 2 10 M A 4S W 1 1 0 M A 4S W 3 10
OUTPUT RETURN LOSS vs BIAS CURRENT @ 10 GHz
OUTPUT RETURN LOSS (dB)
-2 2 -2 2 .5 -2 3 -2 3 .5 -2 4 -2 4 .5 -2 5 -2 5 .5 0 5 10 15 20 25 30 35 40 45 50 55 C U R R E N T (m A )
M A 4S W 110
INSERTION LOSS (dB)
-0 .4 5 -0 .5 -0 .5 5 -0 .6 -0 .6 5 -0 .7 0 5 10 15 20 25 30 35 40 45
M A 4S W 310 M A 4 S W 21 0
50
55
C U R R E N T (m A )
ISOLATION vs BIAS CURRENT @ 10 GHz
-4 6 -4 7 -4 8 -4 9 -5 0 -5 1 -5 2 -5 3 -5 4 0 5 10 15 20 25 30 35 40 45 50 55 C U R R E N T (m A )
M A 4S W 2 10 M A 4S W 1 10
ISOLATION (dB)
M A 4S W 310
Specification Subject to Change Without Notice
4
______________________________________________________________________________ M/A-COM, Inc.
Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
North America: Tel. (800) 366-2266 Fax (800) 618-8883
Monolithic Pin Diode Switches
MA4SW110, MA4SW210, MA4SW310
V5.00
Operation of the MA4SW Series
Operation of the MA4SW series of PIN Switches is achieved by simultaneous application of negative DC current to the low loss switching arm J1, J2, or J3, and positive DC current to the remaining switching arms as shown in the Bias Connection circuits. DC return is achieved via J1. The control currents should be supplied by constant current sources. The voltages at these points will not exceed + 1.5 volts (1.2 volts typical) at currents up to + 50 mA. In the Low Loss state, the series diode must be forward biased and the shunt diode reverse biased. In the isolated arm, the shunt diode is forward biased and the series diode is reverse biased.
MA4SW110 and Bias Connections1
J1 RF INPUT
20pF
20nH J2 BIAS 20pF 100 20nH
20pF
20pF
Switch Chip
J2 RF OUTPUT
Driver Connections MA4SW110
Control Level (DC Current) at J2 -20 mA +20 mA Condition of RF Output J1-J2 Low Loss Isolation
MA4SW210 and Bias Connections1
J1 RF INPUT 20pF J3 BIAS 20nH J2 BIAS
100
MA4SW210
Control Level (DC Current) at J2 -20 mA +20 mA MA4SW310
Control Level (DC Current) at Condition of RF Output J1-J2 Conditio n of RF Output J1-J3 Condition of RF Output J1-J4
20nH
20pF
20pF
20nH
20pF
Condition of RF Output J1-J2 Low Loss Isolation
Condition of RF Output J1-J3 Isolation Low Loss
20pF J3 RF OUTPUT
Switch Chip
20pF
J2 RF OUTPUT
J3 +20 mA -20 mA
MA4SW310 and Bias Connections1
J1 RF INPUT 20pF J4 BIAS 20nH J2 BIAS
J2
J3
J4
-20 mA +20 mA +20 mA
+20 mA -20 mA +20 mA
+20 mA +20 mA -20 mA
Low Loss Isolation Isolation
Isolation Low Loss Isolation
Isolation Isolation Low Loss
20pF J4 RF OUTPUT 20nH 20pF
20pF
100 20nH 20pF
Handling Considerations
Cleanliness: These chips should be handled in a clean environment. Electro-Static Sensitivity: The MA4SW Series PIN switches are ESD, Class 1 sensitive. The proper ESD handling procedures should be used.
20pF
J2 RF OUTPUT
20pF
20nH
J3 BIAS 20pF
J3 RF OUTPUT
Notes: 1. RLC values are for a typical operating frequency of 2 - 18 GHz and Bias Current of 20mA per diode.
Specification Subject to Change Without Notice
M/A-COM, Inc. _______________________________________________________________________________
North America: Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769
5
5Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
Monolithic Pin Diode Switches
Wire Bonding
Top contact is 2.5 M thick gold. Yellow areas in chip, outline drawings below indicate bonding pads.Thermosonic wedge bonding using 0.003" x 0.00025" ribbon or 0.001" diameter gold wire is recommended. A heatstage temperature of 150 oC and a force of 18 to 22 grams should be used. Ultrasonic energy should be adjusted to the minimum required to achieve a good bond. RF bonds should be kept as short as possible.
MA4SW110, MA4SW210, MA4SW310
V5.00
Eutectic Die Attachment
An 80/20 gold-tin eutectic solder preform is recommended with a work surface temperature of 255 oC and a tool tip temperature of 265oC. When hot gas is applied, the tool tip temperature should be 290 oC. The chip should not be exposed to temperatures greater than 320 oC for more than 20 seconds. No more than three seconds should be required for attachment. Assembly should be preheated to 125 -150 oC. A minimum amount of epoxy should be used. A thin epoxy fillet should be visible around the perimeter of the chip after placement. Cure epoxy per manufacturer's schedule.
Epoxy Die Attachment
Mounting
These chips have TiPtAu back metal. Gold thickness is 1.0 M. They can be die mounted with a gold-tin eutectic solder preform or conductive epoxy. Mounting surface must be clean and flat.
Chip Outline Drawing
MA4SW110
DIM A B C D E F G H
INCHES MIN. MAX. 0.014 0.018 0.025 0.029 0.008 REF 0.004 0.006 0.004 REF 0.003 REF 0.003 REF 0.020 REF
MM MIN. 0.35 0.64 0.20 REF 0.10 0.10 REF 0.08 REF 0.08 REF 0.52 REF MAX. 0.45 0.74 0.15
Specification Subject to Change Without Notice
6
______________________________________________________________________________ M/A-COM, Inc.
Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
North America: Tel. (800) 366-2266 Fax (800) 618-8883
Monolithic Pin Diode Switches
MA4SW110, MA4SW210, MA4SW310
V5.00
Chip Outline Drawing
MA4SW210
DIM A B C D E F G H
INCHES MIN. MAX. 0.029 0.033 0.004 0.006 0.004 REF 0.005 REF 0.009 REF 0.023 REF 0.007 REF 0.004 REF
MM MIN. MAX. 0.73 0.83 0.10 0.15 0.10 REF 0.13 REF 0.23 REF 0.58 REF 0.17 REF 0.10 REF
Specification Subject to Change Without Notice
M/A-COM, Inc. _______________________________________________________________________________
North America: Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769
7
7Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
Monolithic Pin Diode Switches
MA4SW110, MA4SW210, MA4SW310
V5.00
Chip Outline Drawing
MA4SW310
DIM A B C D E F G H J MIN. 0.046 0.036
INCHES MAX. 0.050 0.040 0.019 REF 0.014 REF 0.004 REF 0.005 REF 0.004 0.006 0.005 REF 0.004 REF MIN. 1.16 0.92
MM MAX. 1.26 1.02 0.48 REF 0.36 REF 0.10 REF 0.13 REF 0.10 0.12 REF 0.10 REF 0.15
Specification Subject to Change Without Notice
8
______________________________________________________________________________ M/A-COM, Inc.
Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
North America: Tel. (800) 366-2266 Fax (800) 618-8883

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